Real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of Si and SiGe on Si(001)期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of Si and SiGe on Si(001)

Authors:	Turner Pemble Fernández Joyce Zhang Taylor

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