Rate constants for the etching of gallium arsenide by atomic chlorine |
| |
Authors: | Jae H Hat Elmer A Ogryzlo |
| |
Institution: | 1. Department of Chemistry, The University of British Columbia, Vancouver, Canada, V6T 1Y6
|
| |
Abstract: | Known chlorine atom concentrations were prepared in a discharge flow system and used to etch the (100) face of a gallium arsenide single crystal. The etch rate was monitored by mass spectrometry, laser interferometry, and surface proftlometry. In the temperature range from 90 to 160°C the reaction can be described by the rate law $$Etch rate = kP_{Cl} $$ where $$k = 9 \times 10^{(6 \pm 0.5)} \mu m min^{ - 1} Torr^{ - 1} e^{ - 9 \pm 1)kcal/RT} $$ |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|