首页 | 本学科首页   官方微博 | 高级检索  
     

有效折射率微扰法研究单缺陷光子晶体平板微腔的性质
引用本文:周文飞,叶小玲,徐波,张世著,王占国. 有效折射率微扰法研究单缺陷光子晶体平板微腔的性质[J]. 物理学报, 2012, 61(5): 54202-054202
作者姓名:周文飞  叶小玲  徐波  张世著  王占国
作者单位:1. 中国科学院半导体研究所,半导体材料科学重点实验室,北京100083/清华大学物理系,北京100084
2. 中国科学院半导体研究所,半导体材料科学重点实验室,北京100083
基金项目:国家自然科学基金(批准号: 60990315, 60625402, 61161130527)资助的课题.
摘    要:应用有效折射率微扰法结合二维/三维平面波方法研究了施主和受主缺陷型H1微腔的性质, 使用修正后的有效折射率可以准确地计算微腔的腔模频率, 与三维全矢量时域有限差分法的计算结果很相近. 对于施主型H1微腔, 以介质带边为匹配标准修正的有效折射率计算的微腔腔模频率误差最小, 而对于受主型H1微腔, 匹配标准则应设置为中间带. 有效折射率微扰法既可以将计算的维度从三维降到二维, 大大减少计算所需的计算机内存和时间, 又可以保持计算结果的准确性, 这对于光子晶体微腔的广泛应用具有非常重要的价值.

关 键 词:光子晶体平板  H1微腔  有效折射率  腔模频率

Study on properties of the H1 photonic crystal slab cavity using the effective index perturbation method
Zhou Wen-Fei,Ye Xiao-Ling,Xu Bo,Zhang Shi-Zhu and Wang Zhan-Guo. Study on properties of the H1 photonic crystal slab cavity using the effective index perturbation method[J]. Acta Physica Sinica, 2012, 61(5): 54202-054202
Authors:Zhou Wen-Fei  Ye Xiao-Ling  Xu Bo  Zhang Shi-Zhu  Wang Zhan-Guo
Affiliation:Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Department of Physics, Tsinghua University, Beijing 100084, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract:In this paper the effective index perturbation technique in combination with two-dimensional (2D)/three-dimensional (3D) plane wave expansion methods is used to predict resonant mode frequencies of donor-like and acceptor-like H1 photonic crystal slab cavity, and their results are very close to the ones obtained by three-dimensional finite difference time domain method. For donor-like H1 photonic cavity, when the perturbed effective index by matching dielectric band edge is used, there is a relatively small frequency difference; however, for acceptor-like H1 photonic cavity, the matching criterion should be set at middle band position. The effective index perturbation method can not only save computation time and computer memory with reducing dimensionality (from 3D to 2D), but also ensure the accuracy of the simulation results, which is substantially important for the extensive application of photonic crystal slab cavity.
Keywords:photonic crystal slab  H1 cavity  effective index  resonant mode frequencies
本文献已被 CNKI 万方数据 等数据库收录!
点击此处可从《物理学报》浏览原始摘要信息
点击此处可从《物理学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号