| In, Al共掺杂ZnO纳米串光电探测器的组装与研究 |
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| 引用本文： | 袁泽,高红,徐玲玲,陈婷婷,郎颖.In, Al共掺杂ZnO纳米串光电探测器的组装与研究[J].物理学报,2012,61(5):57201-057201. |
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| 作者姓名： | 袁泽 高红 徐玲玲 陈婷婷 郎颖 |
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| 作者单位： | 哈尔滨师范大学物理与电子工程学院物理系,半导体纳米复合材料省部共建教育部重点实验室,哈尔滨150025 |
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| 基金项目： | 国家自然科学基金(批准号: 11074060, 51101069)和哈尔滨师范大学博士启动基金资助的课题. |
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| 摘 要： | 用化学气相沉积法合成了高密度的In, Al共掺杂ZnO纳米串, 用合成出的纳米串组装成了光电探测器. 纳米串为六角纤锌矿结构, 平均长度大约为5 μ m. 研究了光电导的机制以及光电探测器的光电特性, 包括在暗环境及紫外照射下的伏安特性、光电响应率和光电响应时间. 结果表明, 器件存在内部增益机制, 光响应时间小于0.5 s, 衰减时间约为23 s, 可用于光电探测.
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| 关 键 词： | In Al共掺杂ZnO 纳米串 光电探测器件 化学气相沉积法 |
| 收稿时间： | 2011-05-19 |
Fabrication of In-Al codoped ZnO nanobunches photodetectors |
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| Yuan Ze,Gao Hong,Xu Ling-Ling,Chen Ting-Ting and Lang Ying.Fabrication of In-Al codoped ZnO nanobunches photodetectors[J].Acta Physica Sinica,2012,61(5):57201-057201. |
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| Authors: | Yuan Ze Gao Hong Xu Ling-Ling Chen Ting-Ting and Lang Ying |
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| Institution: | Department of Physics, School of Physics and Electronic Engineering, Harbin Normal University, Key Laboratory of Semiconductor Nano
Composite Materials, Ministry of Education, Harbin 150025, China;Department of Physics, School of Physics and Electronic Engineering, Harbin Normal University, Key Laboratory of Semiconductor Nano
Composite Materials, Ministry of Education, Harbin 150025, China;Department of Physics, School of Physics and Electronic Engineering, Harbin Normal University, Key Laboratory of Semiconductor Nano
Composite Materials, Ministry of Education, Harbin 150025, China;Department of Physics, School of Physics and Electronic Engineering, Harbin Normal University, Key Laboratory of Semiconductor Nano
Composite Materials, Ministry of Education, Harbin 150025, China;Department of Physics, School of Physics and Electronic Engineering, Harbin Normal University, Key Laboratory of Semiconductor Nano
Composite Materials, Ministry of Education, Harbin 150025, China |
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| Abstract: | High-density In-Al codoped ZnO(In,Al,ZnO) nanobunches are synthesized by using chemical vapor deposition method,which can be used to fabricate In,Al,ZnO nanobunches photodetectors.The ZnO nanobunches each have a hexagonal wurtzite structure. It is found that the average length of the nanobunches is ~5μm.The photoconduction mechanism and a series of photoelectric characteristics are studied including I-V characteristic measured in dark and UV illumination,responsivity and response time.The results indicate the presence of an internal gain mechanism.The response time is less than 0.5 s and decay time is about 23 s,so the fabricated device can indeed be used for light detection. |
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| Keywords: | In-Al codoped ZnO nanobunches photodetector chemical vapor deposition |
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