Rapid thermal annealing of ITO films |
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| Authors: | Shumei SongTianlin Yang Jingjing LiuYanqing Xin Yanhui LiShenghao Han |
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| Affiliation: | a School of Space Science and Physics, Shandong University at Weihai, Weihai 264209, Shandong, PR China
b School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, Shandong, PR China |
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| Abstract: | Tin-doped indium oxide (ITO) films with 200 nm thickness were deposited on glass substrates by DC magnetron sputtering at room temperature. And they were annealed by rapid thermal annealing (RTA) method in vacuum ambient at different temperature for 60 s. The effect of annealing temperature on the structural, electrical and optical properties of ITO films was investigated. As the RTA temperature increases, the resistivity of ITO films decreases dramatically, and the transmittance in the visible region increases obviously. The ITO film annealed at 600 °C by RTA in vacuum shows a resistivity of 1.6 × 10−4 Ω cm and a transmittance of 92%. |
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| Keywords: | 73.21.Ac 73.40.Vz |
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