In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution |
| |
| Authors: | S McDonnellDM Zhernokletov AP KirkJ Kim RM Wallace |
| |
| Institution: | Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA |
| |
| Abstract: | GaSb(0 0 1) was treated with (NH4)2Sx and the evolution of the interfacial chemistry was investigated, in situ, with monochromatic X-ray photoelectron spectroscopy (XPS), following heat treatment and exposure to trimethylaluminum (TMA) and deionized water (DIW) in an atomic layer deposition reactor. Elemental Sb (Sb-Sb bonding) as well as Sb3+ and Sb5+ chemical states were initially observed at the native oxide/GaSb interface, yet these diminished below the XPS detection limit after heating to 300 °C. No evidence of Ga-Ga bonding was observed whereas the Ga1+/Ga-S chemical state was robust and persisted after heat treatment and exposure to TMA/DIW at 300 °C. |
| |
| Keywords: | XPS Atomic layer deposition Al2O3 GaSb High mobility substrates |
| 本文献已被 ScienceDirect 等数据库收录！ |
