Preparation and properties of SnS film grown by two-stage process |
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Authors: | Feng JiangHonglie Shen Chao GaoBing Liu Long LinZhou Shen |
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Affiliation: | College of Materials Science & Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing 210016, PR China |
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Abstract: | SnS films have been prepared by a novel two-stage process. It involved sputtering of Sn film on glass substrate and sulfurization of the thin metallic tin precursor layers in a vacuum furnace. The X-ray diffraction results showed that the SnS layers had orthorhombic structure and (0 4 0) preferential growth is more and more obvious with the increase of sulfurization time. The SnS film obtained by this work shows high optical absorption efficiency, and the film has a direct optical band gap of about 1.3 eV. The films show p-type conductivity and the resistivity of SnS film decreased obviously under illumination. |
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Keywords: | SnS films Tin precursor layer Sulfurization Photoconductivity |
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