CdS thin films growth by fast evaporation with substrate rotation |
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Authors: | R Castro-Rodríguez J Mendez-GamboaI Perez-Quintana R Medina-Ezquivel |
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Institution: | a Applied Physics Department, CINVESTAV-IPN Mérida, C.P. 97310, Mérida, Yucatán, Mexico b Yucatán Autonomous University, Faculty of Engineering. AP 150 Cordemex, 97310, Mérida, Yucatán, Mexico |
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Abstract: | CdS thin films were grown by fast evaporation technique combined with substrate rotation. The source evaporation temperature was maintained at 600 °C and the substrate temperature at 350 °C with background pressure of 1.0 m Torr. The substrates were corning glass 2947 with dimension of 1 in. × 1 in. rotate at 500 rpm during the growth. In order to verify the quality of the CdS films, the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and optical measurements. The films shown a flat uniformity thickness with growth rate of ∼3.5 nm/s, the orientation was in the cubic-(1 1 1) and hexagonal-(0 0 2) plane in dependence of the growth time, grain size ∼5 nm, roughness uniformity ∼2.7 nm, transmittance in the visible region spectrum ∼80%, energy band gap between 2.39 and 2.42 eV and short circuit photocurrent density (JSC) losses in the CdS films of 4.7 mA/cm2. |
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Keywords: | Flash deposition technique CdS thin films Physical properties Solar cells |
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