Electroluminescence of the p-ZnO:As/n-ZnO LEDs grown on ITO glass coated with GaAs interlayer |
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| Authors: | Wang ZhaoLong Zhao Zhifeng ShiXiaochuan Xia Xiangping LiXin Dong Yuchun Chang Baolin ZhangGuotong Du |
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| Affiliation: | a State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
b Department of Physics, Dalian University of Technology, Dalian 116023, China |
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| Abstract: | In this paper, we proposed a new p-type ZnO doping method with metal organic chemical vapor deposition (MOCVD) technology by inserting a GaAs interlayer between substrate and ZnO epitaxial layer. The doping concentration of p-type ZnO film is able to be controlled by adjusting the thickness of the GaAs interlayer. With this method, we fabricated n-ZnO/p-ZnO:As homojunction light-emitting diode (LED) on ITO-glass substrate pre-coated with 20 nm GaAs interlayer. The device exhibits a typical rectifying behavior by current-voltage (I-V) measurement. When the device is forward biased, UV-vis electroluminescence (EL) emissions can be observed clearly. |
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| Keywords: | ZnO homojunction Arsenic Light-emitting diode Metal organic chemical vapor deposition |
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