Boron-doped nanocrystalline silicon thin films for solar cells |
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Authors: | E FathiY Vygranenko M Vieira A Sazonov |
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Institution: | a Electrical and Computer Engineering Department, University of Waterloo, Waterloo, N2L 3G1, Canada b Electronics, Telecommunications and Computer Engineering Department, ISEL, 1959-007 Lisbon, Portugal c CTS-UNINOVA, 2829-516 Caparica, Portugal |
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Abstract: | This article reports on the structural, electronic, and optical properties of boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films. The films were deposited by plasma-enhanced chemical vapour deposition (PECVD) at a substrate temperature of 150 °C. Crystalline volume fraction and dark conductivity of the films were determined as a function of trimethylboron-to-silane flow ratio. Optical constants of doped and undoped nc-Si:H were obtained from transmission and reflection spectra. By employing p+ nc-Si:H as a window layer combined with a p′ a-SiC buffer layer, a-Si:H-based p-p′-i-n solar cells on ZnO:Al-coated glass substrates were fabricated. Device characteristics were obtained from current-voltage and spectral-response measurements. |
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Keywords: | Thin solid films Nanocrystalline silicon PECVD Solar cells |
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