The influence of Mn content on luminescence properties in Mn-doped ZnO films deposited by ultrasonic spray assisted chemical vapor deposition |
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Authors: | D Shuang XX ZhuJB Wang XL ZhongGJ Huang C He |
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Institution: | a School of Science, Hunan Institute of Engineering, Xiangtan 411104, Hunan, China b Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan 411105, Hunan, China |
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Abstract: | Mn-doped ZnO (Zn1−xMnxO, 0 ≤ x ≤ 0.1) films are prepared by an ultrasonic spray assisted chemical vapor deposition method. X-ray diffraction and Raman scattering show that all the Zn1−xMnxO films are good wurtzite structures without any impurity phases. Cathodoluminescence spectra show that ultraviolet emission and green luminescence can be observed. The intensity of ultraviolet emission decreases with the increment of x, while the intensity of green luminescence increases with the increment of x when x ≤ 0.02. However, when x (x > 0.02) is further increased, the intensity of green luminescence decreases gradually, and the green luminescence disappears when x is above 0.075. We consider that the change of the luminescence is related to the competition between the radiative recombination and the non-radiative recombination. |
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Keywords: | 78 20 &minus e 81 15 &minus z 81 05 Dz |
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