|
|||||
|
|
Structural, optical and electrical properties of ZnO/Zn2GeO4 porous-like thin film and wires |
|
| Authors: | Mohd Muzafa Jumidali Kamal Mahir Sulieman Md Roslan Hashim |
| Institution: | a Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia 11800, Penang, Malaysia b Faculty of Applied Sciences, Universiti Teknologi MARA, 13500 Penang, Malaysia c Physics Department, Alzaiem Alazhary University,1432-Khartoum, Sudan |
| Abstract: | Zinc oxide/zinc germanium oxide (ZnO/Zn2GeO4) porous-like thin film and wires has been fabricated by simple thermal evaporation method at temperature about 1120 °C for 2.5 h. The structural and optical properties of the porous-like-thin film and wires have been investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. Metal semiconductor metal (MSM) photodetector structure was used to evaluate the electrical characteristics by using current-voltage (I-V) measurements. Room temperature photoluminescence spectrum of the sample shows one prominent ultraviolet peak at 378 nm and a shoulder at 370 nm. In addition, broad visible blue emission peak at wavelength 480 nm and green emission peak at 500 nm are also observed. Strong photoelectric properties of the MSM in the UV demonstrated that the porous-like-thin film and wires contribute to its photosensitivity and therefore making ZnO/Zn2GeO4 wires potential photodetector in the shorter wavelength applications. |
| Keywords: | ZnO/Zn2GeO4 Porous-like structure Structural properties Optical properties Electrical properties MSM photodetector |
| 本文献已被 ScienceDirect 等数据库收录！ | |