Effect of different annealing methods on ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3 thin films |
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Authors: | Xuedong Li Hongli GuoHong Liu Dingquan XiaoJianguo Zhu |
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Affiliation: | a College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China b College of Physics and Electric Information Engineering, Mianyang Normal University, Mianyang 621000, China |
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Abstract: | 0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3 thin films were prepared on LaNiO3/SiO2/Si substrate by radio frequency magnetron sputtering, and the films were annealed subsequently with repeated many times by two approaches: normal one-step rapid thermal annealing and innovative two-steps rapid thermal annealing. X-ray diffraction demonstrates that all the films were preferred (1 0 0) oriented and an appropriate repeat of annealing process can enhance perovskite phase of the films. Scanning electron microscopy suggests that the films treated by two-steps rapid thermal annealing show crack-free, uniform size grains and dense microstructure. Measurement of remnant polarization and leakage current dependence of electric field confirms that the films treated by two-steps rapid thermal annealing exhibit better ferroelectric properties than the films treated by one-steps rapid thermal annealing. The results reveal that microstructure plays an important role in enhanced ferroelectric properties of the 0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3 thin films. |
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Keywords: | 0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3 thin films Radio frequency magnetron sputtering Two-steps rapid thermal annealing Ferroelectric properties |
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