The transparence comparison of Ga- and Al-doped ZnO thin films |
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| Authors: | Zheng-Zheng Li Zhi-Zhan ChenWei Huang Shao-Hui ChangXue-Ming Ma |
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| Affiliation: | a Department of Physics, East China Normal University, Shanghai 200062, China
b Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China |
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| Abstract: | The Ga-doped ZnO (GZO) and Al-doped ZnO (AZO) thin films were grown on quartz glass substrates by pulsed laser deposition under different oxygen partial pressures (PO2). The transparent performances of films versus properties of structure and conductivity were discussed. With the increase of PO2, the transmittance of both GZO films and AZO films increased to maximum and then decreased which were in according with the change of crystallization quality. The transmittance of GZO films was higher than that of AZO films, which were not dominated by the impurity ions induced by doping. AFM images and surface roughness mean square coefficients showed that the surfaces of GZO films were smoother than that of AZO films, which were due to the dopant Ga acting as the surfactant and smoothed the GZO films surface. |
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| Keywords: | Ga- and Al-doped ZnO ZnO thin films TCO electrode |
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