Low-temperature deposited ZnO thin films on the flexible substrate by cathodic vacuum arc technology |
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Authors: | Ru-Yuan Yang Min-Hang WengCheng-Tang Pan Chin-Min HsiungChun-Chih Huang |
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Institution: | a Department of Materials Engineering, National Ping-Tung University of Science and Technology, Taiwan b Medical Devices and Opto-electronics Equipment Department, Metal Industries Research & Development Center, Taiwan c Department of Mechanical and Electron-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung County 804, Taiwan d Department of Mechanical Engineering, National Ping-Tung University of Science and Technology, Taiwan |
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Abstract: | In this paper, un-doped zinc oxide (ZnO) films with various thicknesses (150, 250, 350, 450 and 550 nm) were successfully prepared onto PET substrates using cathodic vacuum arc technique at low-temperature (<40 °C). Their microstructure, optical and electrical properties were investigated and discussed. The films showed (0 0 2) peaks, an average transmittance over 80% in the visible region. Calculated values of the band gap are around 3.29-3.33 eV when the film thickness increased, indicating a slight blue shift of optical transmission spectra. The lowest resistivity about 5.26 × 10−3 Ω cm could be achieved for the un-doped ZnO film with thickness of 550 nm. |
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Keywords: | ZnO Cathodic vacuum arc PET Thin film |
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