|
|||||
|
|
Experimental and theoretical study of silicon-doped Sb2Te3 thin films: Structure and phase stability |
|
| Authors: | Xuelai Li Feng RaoZhitang Song Kun Ren Weili LiuZhimei Sun |
| Institution: | a State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China b Graduate School of the Chinese Academy of Sciences, 100080 Beijing, China c Department of Materials Science and Engineering, College of Materials, Xiamen University, 361005 Xiamen, China |
| Abstract: | The influence of Si in Sb2Te3 on structure and phase stability was studied by experiments and ab initio calculations. With the increase of Si content in Sb2Te3 samples, the crystallization temperature increases and the crystalline grain size decreases. The incorporation of Si atoms into Sb2Te3 lattice is energetically unfavorable and hence Si atoms most probably accumulated in the boundaries of Sb2Te3 grains. |
| Keywords: | Sb2Te3 Crystallization temperature PCRAM Ab initio calculations |
| 本文献已被 ScienceDirect 等数据库收录！ | |