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Growth, modulation and photoresponse characteristics of vertically aligned ZnO nanowires |
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| Authors: | JP Kar SN DasJH Choi TI LeeJ Seo T LeeJM Myoung |
| Institution: | a Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon Dong, Seoul 120 749, Republic of Korea b Department of Electronics Engineering, University of Tor Vergata, Via del Politecnico, 1-0013 Rome, Italy c Nanobio Device Laboratory, School of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-Dong, Seoul 120-749, Republic of Korea |
| Abstract: | Vertically aligned, c-axis oriented zinc oxide (ZnO) nanowires were grown on Si substrate by metal organic chemical vapor deposition (MOCVD) technique, where sputtered aluminum nitride (AlN) film was used as an intermediate layer and thermally evaporated barium fluoride (BaF2) film as a sacrificial layer. The aspect ratio and density of the nanowires were also varied using only Si microcavity without any interfacial or sacrificial layer. The UV detectors inside the microcavity have shown the higher on-off current ratio and fast photoresponse characteristics. The photoresponse characteristics were significantly varied with the aspect ratio and the density of nanowires. |
| Keywords: | 81 05 Dz 81 07 &minus b 81 15 Gh 78 67 &minus n 85 60 Gz |
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