Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs |
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| Authors: | Hong Joo Song Cheong Hyun RohHong Goo Choi Min-Woo HaCheol-Koo Hahn Jung Ho ParkJun Ho Lee |
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| Institution: | a Compound Semiconductor Devices Research Center, Korea Electronics Technology Institute, Seongnam 463-816, Republic of Korea
b Department of Electrical Engineering, Korea University, Seoul 136-701, Republic of Korea |
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| Abstract: | In this paper, we report the dependence of Ni/Ag/diffusion barrier (D.B)/Au p-ohmic contact on PtD.B and TiD.B for GaN based flip-chip light emitting diodes (FC LEDs). It is shown that D.B metals have strongly influenced on the reflectance and contact resistivity of contacts. We present these results are caused by the variation of the morphology and atomic distribution due to D.Bs. The roles of PtD.B and TiD.B on Ni/Ag/D.B/Au p-GaN ohmic contacts are analyzed using the confocal laser scanning microscopy (CLSM) measurement and the secondary ion mass spectroscopy (SIMS) profiles in details. |
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| Keywords: | GaN Flip-chip (FC) p-Ohmic contact Silver (Ag) Specific contact resistivity Reflectance Surface morphology |
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