Diffusion barrier performance of TiVCr alloy film in Cu metallization |
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Authors: | Du-Cheng TsaiYen-Lin Huang Sheng-Ru LinDe-Ru Jung Shou-Yi ChangFuh-Sheng Shieu |
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Institution: | Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan |
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Abstract: | In this study, 15 nm-thick sputter-deposited TiVCr alloy thin films were developed as diffusion barrier layers for Cu interconnects. The TiVCr alloy film tends to form a solid solution and a simple crystal structure from the constituted elements. Under TEM, the 15 nm-thick as-deposited TiVCr alloy film was observed to have a dense semi-amorphous or nanocrystalline structure. In conjunction with X-ray diffraction, transmission electron microscopy, and energy-dispersive spectroscopy analyses, the Si/TiVCr/Cu film stack remained stable at a high temperature of 700 °C for 30 min. The electrical resistance of Si/TiVCr/Cu film stack remained as low as the as-deposited value. These indicated that the mixed TiVCr refractory elements’ alloy barrier layer is very beneficial to prevent Cu diffusion. |
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Keywords: | Nitrides Sputtering Electron microscopy Thermal properties |
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