Zirconium-assisted reaction in low temperature atomic layer deposition using Bis(ethyl-methyl-amino)silane and water |
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| Authors: | Seok-Jun Won |
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| Affiliation: | a Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul, 151-742, Republic of Korea
b Technology Development Team, System-LSI division, Samsung Electronics Co. Ltd., Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-Do, 446-711, Republic of Korea; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul, 151-742, Republic of Korea |
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| Abstract: | The reaction of Bis(ethyl-methyl-amino)silane (BEMAS) and water in atomic layer deposition (ALD) became possible when Zr-containing species were adsorbed on the vacant sites of the surface after a pulse and purge of BEMAS. The growth rates of the Si(Zr)Ox films were 0.8-0.9 nm/cycle in the temperature range of 185-325 °C. This phenomenon probably originates from the highly reactive hydroxyl species generated by Zr atoms. From this point of view, transition metals make reactant gas molecules to be highly activated in the ALD processes of transition metal oxides and nitrides, which might be an important factor that determines the ALD characteristics. |
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| Keywords: | Atomic layer deposition Silicate Hydroxyl Transition metal |
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