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Interfacial reaction and electrical characteristics of Cu(RuTaNx) on GaAs: Annealing effects |
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| Authors: | WK LeauJP Chu CH Lin |
| Institution: | a Institute of Materials Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan b Department of Materials Science and Engineering and Graduate Institute of Engineering, National Taiwan University of Science and Technology, No. 43, Keelung Road, Sec. 4, Taipei 10607, Taiwan c Department of Environmental Engineering, Chin-Min Institute of Technology, Tou-Fen 35153, Taiwan |
| Abstract: | This study elucidates the thermal stability and quasi ohmic contact characteristics of Cu(RuTaNx) fabricated on a barrierless GaAs substrate. Cu(RuTaNx) was prepared by cosputtering Cu, Ta, Ru, and N. The resistivity of the Cu(RuTaNx)/GaAs structure annealed at 500 °C for 30 min was lower than that of the as-deposited structure, and the former was thermally stable up to 500 °C after 30 min of annealing. Further, the Cu(RuTaNx)/GaAs structure exhibited electrical rectifying properties upon annealing at 550 °C for 10 min and revealed a quasi ohmic contact, as determined by the circular transmission line model (CTLM). The formation of quasi ohmic contact is further confirmed by transmission electron microscopy and energy dispersive X-ray spectroscopy. |
| Keywords: | Barrierless GaAs Cu(RuTaNx) Copper metallization Quasi ohmic contact CTLM |
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