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Investigation of chemical bath deposition of CdO thin films using three different complexing agents |
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| Authors: | Hani KhallafChia-Ta Chen Liann-Be Chang Oleg Lupan Aniruddha Dutta Helge Heinrich A ShenoudaLee Chow |
| Institution: | a Department of Physics, University of Central Florida, Orlando, FL 32816, USA b Graduate Institute of Electro-Optical Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan c Green Technology Research Center, Chang Gung University, Kweishan, Taoyuan 333, Taiwan d Department of Microelectronics and Semiconductor Devices, Technical University of Moldova, 168 Stefan cel Mare Boulevard, MD-2004 Chisinau, Republic of Moldova e Advanced Materials Processing and Analysis Centre, Department of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL 32816, USA f Central Metallurgical R&D Institute (CMRDI), Tebbin, P.O. Box 87, Helwan, Egypt |
| Abstract: | Chemical bath deposition of CdO thin films using three different complexing agents, namely ammonia, ethanolamine, and methylamine is investigated. CdSO4 is used as Cd precursor, while H2O2 is used as an oxidation agent. As-grown films are mainly cubic CdO2, with some Cd(OH)2 as well as CdO phases being detected. Annealing at 400 °C in air for 1 h transforms films into cubic CdO. The calculated optical band gap of as-grown films is in the range of 3.37-4.64 eV. Annealed films have a band gap of about 2.53 eV. Rutherford backscattering spectroscopy of as-grown films reveals cadmium to oxygen ratio of 1.00:1.74 ± 0.01 while much better stoichiometry is obtained after annealing, in accordance with the X-ray diffraction results. A carrier density as high as 1.89 × 1020 cm−3 and a resistivity as low as 1.04 × 10−2 Ω-cm are obtained. |
| Keywords: | CdO Thin films Group II-VI Semiconductors Chemical bath deposition |
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