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Enhancement of saturation magnetization in Cr-ion implanted silicon by high temperature annealing |
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| Authors: | Shuang YangWenyong Zhang Jihong ChenZhongpo Zhou Zhiwei AiLiping Guo Congxiao LiuHonglin Du |
| Affiliation: | a Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China b Department of Mathematics, Alabama A&M University, 4900 Meridian Street, Normal, AL 35762, USA c School of Physics, Peking University, Beijing 100871, China |
| Abstract: | Magnetic properties and microstructure of Cr-implanted Si have been investigated by alternating gradient magnetometer (AGM), superconducting quantum interference device (SQUID) magnetometer, and transmission electron microscopy (TEM). p-Type (1 0 0) Si wafers were implanted at 200 keV at room temperature with a dosage of 1 × 1016 cm−2 Cr ions and then annealed at 600-900 °C for 5 min. The effect of annealing on the structure and magnetic properties of Cr-implanted Si is studied. The as-implanted sample shows a square M-H loop at low temperature. Magnetic signal becomes weaker after short time annealing of the as-implanted sample at 600 °C, 700 °C, and 800 °C. However, the 900 °C annealed sample exhibits large saturation magnetization at room temperature. TEM images reveal that the implanting process caused amorphization of Si, while annealing at 900 °C led to partial recovery of the crystal. The enhancement of saturation magnetization can be explained by the redistribution and accumulation of Cr atoms in the vacancy-rich region of Si during annealing. |
| Keywords: | Diluted magnetic semiconductors Ion implantation Silicon Chromium |
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