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The study of optimal oxidation time and different temperatures for high quality VO2 thin film based on the sputtering oxidation coupling method |
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| Authors: | Xiaofeng Xu Xinfeng HeGang Wang Xiaolong YuanXingxing Liu Haiyan HuangSheng Yao Huaizhong XingXiaoshuang Chen Junhao Chu |
| Affiliation: | a Department of Applied Physics, Donghua University, No. 2999 North Renmin Road, Songjiang District, Shanghai 201620, PR China b National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083, PR China |
| Abstract: | The high quality Vanadium dioxide (VO2) thin films have been fabricated successfully on sapphire by a simple novel sputtering oxidation coupling (SOC) method. All VO2 thin film samples exhibit a good metal-insulator transition (MIT) at about 340 K. The optimal oxidation time at different temperatures has been experimentally investigated. We report on the relationship between optimal oxidation time and different temperatures of metal vanadium thin film samples of 101 nm thickness by oxidation in air. It is found that the optimal oxidation time ln(t) as a function of temperature 1/T shows a significant linear relationship among 703 K-783 K, in good agreement with the Wagner's high-temperature oxidation model. |
| Keywords: | Vanadium dioxide Sputtering oxidation coupling Optimal oxidation time Temperature |
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