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Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy |
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| Authors: | K. Shi X.L. Liu D.B. Li J. WangH.P. Song X.Q. XuH.Y. Wei C.M. JiaoS.Y. Yang H. SongQ.S. Zhu Z.G. Wang |
| Affiliation: | a Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China b Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nan Hu Road, Changchun 130033, People's Republic of China |
| Abstract: | XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. The valence band offset (VBO) was determined to be 0.38 ± 0.15 eV and a type-II heterojunction with a conduction band offset (CBO) of 2.43 ± 0.15 eV was obtained. |
| Keywords: | Valence band offset GaN/diamond heterojunction XPS Conduction band offset |
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