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Structure and hardness of a-C:H films prepared by middle frequency plasma chemical vapor deposition |
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| Authors: | Guangwei Guo Guangze Tang Yajun WangXinxin Ma Mingren SunLiqin Wang Ken Yukimura |
| Institution: | a State Key Laboratory of Advanced Welding Production Technology, Harbin Institute of Technology, Harbin 150001, China b School of Mechanical Science and Engineering, Northeast Petroleum University, Daqing 163318, China c National Key Laboratory of Science and Technology on Precision Hot Processing of Metals Harbin Institute of Technology, Harbin 150001, China d School of Material Science & Engineering, Harbin Institute of Technology, Harbin 150001, China e School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China |
| Abstract: | a-C:H films were prepared by middle frequency plasma chemical vapor deposition (MF-PCVD) on silicon substrates from two hydrocarbon source gases, CH4 and a mixture of C2H2 + H2, at varying bias voltage amplitudes. Raman spectroscopy shows that the structure of the a-C:H films deposited from these two precursors is different. For the films deposited from CH4, the G peak position around 1520 cm−1 and the small intensity ratio of D peak to G peak (I(D)/I(G)) indicate that the C-C sp3 fraction in this film is about 20 at.%. These films are diamond-like a-C:H films. For the films deposited from C2H2 + H2, the Raman results indicate that their structure is close to graphite-like amorphous carbon. The hardness and elastic modulus of the films deposited from CH4 increase with increasing bias voltage, while a decrease of hardness and elastic modulus of the films deposited from a mixture of C2H2 + H2 with increasing bias voltage is observed. |
| Keywords: | a-C:H films MF-PCVD Structure Hardness Elastic modulus |
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