Influence of spin-glass-like phase on magnetic and electrical transport properties of reactive sputtered Al1−xFexN films |
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Authors: | WB Mi XC WangHL Bai |
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Institution: | a Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, China b Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300191, China |
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Abstract: | Nanocrystalline Al1−xFexN films were fabricated using the reactive sputtering method. A large amount of spin-glass-like moments are in the films. With the decrease of temperature, the films turn from the spin-glass-like behavior to ferromagnetism. At low temperatures, the saturation magnetization increases and the coercivity decreases with the increase of x. The coercivity increases significantly below 50 K due to the pinning effect of the frozen disordered spin-glass-like moments. All of the films are semiconducting. The low-temperature transport mechanism turns from tunneling to hopping as x increases. Magnetoresistance (MR) shows weak saturation trend with the applied field because of the hard alignment of the frozen moments. Meanwhile, MR follows the relation of log |MR|=a+bT−1, and the spin polarization satisfies P(T)=P0e−βTα, related with the disordered spin-glass-like moments. |
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Keywords: | 73 50 &minus h 73 63 Bd 73 43 Qt 75 70 &minus i |
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