| 双外延基区4H-SiC BJTs的建模与仿真 |
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| 引用本文： | 张倩,张玉明,张义门. 双外延基区4H-SiC BJTs的建模与仿真[J]. 计算物理, 2010, 27(5): 771-778 |
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| 作者姓名： | 张倩 张玉明 张义门 |
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| 作者单位： | 西安电子科技大学微电子学院, 宽禁带半导体材料与器件重点实验室, 陕西 西安 710071 |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No.60876061); Pre-research Project(Project No.51308040302) |
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| 摘 要： | 基于4H-SiC的材料特性,对具有双外延基区结构的4H-SiC双极晶体管进行研究.通过分析该结构在基区内部形成的自建电场以及基区渡越时间,利用正交试验的方法,基于各种器件二维模型,对该器件结构进行数值计算,并进行平均极差分析.计算结果表明,该器件的共发射结电流增益最高可达72,具有负温度系数,并且在一个很宽的集电极电流范围内该特性保持不变.
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| 关 键 词： | H-SiC 双极晶体管 基区自建电场 基区渡越时间 |
| 收稿时间： | 2009-05-19 |
| 修稿时间： | 2009-10-27 |
Modeling and Simulation of Double Base Epilayer 4H-SiC BJTs |
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| ZHANG Qian,ZHANG Yuming,ZHANG Yimen. Modeling and Simulation of Double Base Epilayer 4H-SiC BJTs[J]. Chinese Journal of Computational Physics, 2010, 27(5): 771-778 |
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| Authors: | ZHANG Qian ZHANG Yuming ZHANG Yimen |
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| Affiliation: | School of Microelectronics, Xidian University, Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, Xi'an 710071, China |
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| Abstract: | With characteristics of 4H-SiC, a double base epilayer 4H-SiC bipolar junction transistors (BJTs) is investigated. By analyzing build-in electric field in the base region and the base transit time, the device is numerically calculated in two-dimensional models according to orthogonal experiments. A mean range analysis is made to find optimized structure of 4H-SiC BJTs. It shows that common emitter current gain with negative temperature coefficient is about 72 and it remains high in a wide range of collector current. |
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| Keywords: | 4H-SiC |
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