| SiGe HBT势垒电容模型 |
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| 引用本文： | 吕懿,张鹤鸣,戴显英,胡辉勇,舒斌.SiGe HBT势垒电容模型[J].物理学报,2004,53(9):3239-3244. |
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| 作者姓名： | 吕懿 张鹤鸣 戴显英 胡辉勇 舒斌 |
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| 作者单位： | 西安电子科技大学微电子所，西安 710071 |
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| 基金项目： | 国家部委预研基金（批准号：51408010301DZ0131)及模拟集成电路重点实验室基金(批准号：JS0921DZ01）资助的课题. |
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| 摘 要： | 在考虑SiGe HBT的势垒电容时，通常的耗尽层近似不再适用，应考虑可动载流子的影响.在分析研究SiGe HBT载流子输运的基础上，建立了考虑发射结势垒区内载流子分布的发射结势垒电容模型和不同电流密度下包括基区扩展效应的集电结势垒电容模型.将以上势垒电容 模型应用于SiGe HBT频率特性模拟，模拟结果与实验结果符合得很好.
关键词：
SiGe HBT
势垒电容
微分电容
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| 关 键 词： | SiGe HBT 势垒电容 微分电容 |
| 文章编号： | 1000-3290/2004/53(09)/3239-06 |
| 收稿时间： | 2003-10-13 |
Junction capacitance models of SiGe HBT |
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| Lü Yi,Zhang He-Ming,Dai Xian-Ying,Hu Hui-Yong,Shu Bin.Junction capacitance models of SiGe HBT[J].Acta Physica Sinica,2004,53(9):3239-3244. |
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| Authors: | Lü Yi Zhang He-Ming Dai Xian-Ying Hu Hui-Yong Shu Bin |
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| Abstract: | When SiGe HBT is in the case of normal operation, depleted approximation is not suited, and the influence of movable charge should be taken into account when considering of their junction capacitance. Based on the analysis and study of the carrier transport of SiGe HBT, emitter junction capacitance model is developed by considering the carrier distribution, and the collector junction capacitance model is also established for different current densities including base extending effect. The junction capacitance models are used to simulate frequency characteristics. The results of simulation show good agreements with the experimental data. |
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| Keywords: | SiGe HBT junction capacitance differential capacitance |
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