Thermal decomposition of 1,1-dimethylhydrazine on Si(100)-2 × 1

The surface reaction of 1,1-dimethylhydrazine (DMH) with Si(100) has been studied with temperature programmed desorption spectroscopy (TPD), temperature programmed static secondary ion mass spectrometry (TPSSIMS), X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES). Adsorption of DMH on Si(100) at 170 K followed by annealing to 1100 K results in significant decomposition to form surface carbide and nitride. TPD results show that the only gas phase desoprtion products are hydrogen and dimethylamine. Furthermore, decomposition occurs over a broad temperature range; XPS and TPSIMS results indicate C---N bond cleavage beginning at 400 K and by 600 K, all the C---N bonds have dissociated. We propose a molecular level mechanism that involves partial decomposition upon adsorption followed by extensive bond cleavage to form surface carbide and nitride.