首页 | 本学科首页   官方微博 | 高级检索  
     

Ti-2Al-2.5Zr合金He离子辐照效应研究
引用本文:何晓, 封向东, 周继萌, 等. Ti-2Al-2.5Zr合金He离子辐照效应研究[J]. 强激光与粒子束, 2006, 18(07).
作者姓名:何晓  封向东  周继萌  刘彦章  祖小涛
作者单位:1.电子科技大学 应用物理系,成都 61 0054;;;2.四川大学 辐射物理及技术教育部重点实验室,成都 61 0064
摘    要:在Ti-2Al-2.5Zr合金中注入能量为75 keV的He离子,注入剂量分别为5×1016cm-2,1×1017 cm-2。通过显微硬度测量和剖面电子显微观察,研究了He离子对Ti-2Al-2.5Zr合金力学性能和显微组织的影响。结果表明:样品的显微硬度随He离子注量的增加而升高,在温度为350和550 ℃的Ar气中退火后硬度有所下降。剖面电子显微观察发现有位错环和He气泡生成,退火后He气泡有长大、缺陷有回复的趋势。辐照产生的位错环是辐照后硬度升高的直接原因,其退火发生回复又引起硬度随退火温度的升高而降低。

关 键 词:Ti-2Al-2.5Zr合金   离子注入   透射电镜   显微硬度

Effect of He on properties and microstructure of Ti-2Al-2.5Zr alloy
he xiao, feng xiang-dong, zhou ji-meng, et al. Effect of He on properties and microstructure of Ti-2Al-2.5Zr alloy[J]. High Power Laser and Particle Beams, 2006, 18.
Authors:he xiao  feng xiang-dong  zhou ji-meng  liu yan-zhang  zu xiao-tao
Affiliation:1. Department of Applied Physics,University of Electronic Science and Technology of China,Chengdu 610054,China;;;2. Key Laboratory for Radiation Physics and Technology of Ministry of Education,Sichuan University,Chengdu 610064,China
Abstract:Ion-implantation-enhanced hardening and microstructure change of a Ti-2Al-2.5Zr alloy by 75 keV helium ion implantation with the dose of 5×1016 cm-2 or 1×1017 cm-2 is investigated. The maximum temperature during the implantation was monitored to be less than 200 ℃. The base pressure in the vacuum chamber was 6×10-4 Pa, and the working pressure was 1.6×10-3 Pa. The morphology and the structure of the implant samples have been characterized by TEM using a JEOL 2010FEG at 200 keV. The surface characterization of samples was studied by Vickers hardness tests. The He-induced hardening was observed. The He-induced hardening decreases with annealing at 350 ℃ and 550 ℃. The results of TEM analysis show that helium bubbles and dislocation loops are formed in the near surface region. He-ion-i
Keywords:ti-2al-2.5zr alloy  he ion implantation  tem  microhardness
点击此处可从《强激光与粒子束》浏览原始摘要信息
点击此处可从《强激光与粒子束》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号