| 微电路FPGA的γ电离总剂量效应与加固技术 |
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| 引用本文： | 袁国火, 杨怀民, 徐曦, 等. 微电路FPGA的γ电离总剂量效应与加固技术[J]. 强激光与粒子束, 2006, 18(03). |
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| 作者姓名： | 袁国火 杨怀民 徐曦 董秀成 |
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| 作者单位： | 1.西华大学 电气信息学院, 成都 61 0039;;;2.中国工程物理研究院 电子工程研究所, 四川 绵阳 621 900 |
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| 摘 要： | 讨论了Actel公司的FPGA芯片A1280XL在有偏置和无偏置条件下的γ电离总剂量效应，试验结果表明偏置条件对FPGA芯片电离总剂量效应有较大影响，在有偏置下FPGA芯片A1280XL失效阈最小，为12.16 Gy(Si)；无偏置时FPGA失效阈最大，为33.2 Gy(Si)。对芯片内部结构进行了辐射效应分析，并提出一些加固方法提高器件的抗总剂量能力，如电路设计中采用冗余技术来实现对故障的检测和隔离，以及选取适当的屏蔽材料对器件进行屏蔽。
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| 关 键 词： | FPGA 电离总剂量 辐照效应 加固方法 |
Total ionizing dose effects and hardening techniques of microcircuit FPGA |
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| yuan guo-huo, yang huai-min, xu xi, et al. Total ionizing dose effects and hardening techniques of microcircuit FPGA[J]. High Power Laser and Particle Beams, 2006, 18. |
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| Authors: | yuan guo-huo yang huai-min xu xi dong xiu-cheng |
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| Affiliation: | 1. School of Electrical and Information Engineering,Xihua University,Chengdu 610039,China;;;2. Institute of Electronic Engineering,CAEP,P.O.Box 919-522,Mianyang 621900,China |
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| Abstract: | Total ionizing dose effects of Actel FPGA chip A1280XL are analyzed in detail with interrupting dynamic bias voltage and dynamic bias voltage conditions. Experimentation results indicate that bias conditions have a great effect on total ionizing dose effects of FPGA chip. The damage threshold value of FPGA chip is 12.16 Gy(Si) under the dynamic bias voltage condition. The damage threshold value of FPGA chip is 33.2 Gy(Si) under interrupting dynamic bias voltage condition. The chip radiation effects are analyzed for programmable chip inside structure. Available hardening techniques are introduced to improve device radiation hardened total ionizing dose ability, such as using redundance technique for failure check and isolation, selecting proper shield material for shielding the devices. |
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| Keywords: | fpga total ionizing dose radiation effects hardening techniques |
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