| XUV成像系统中像传递函数研究用的Si刻蚀膜 |
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| 引用本文： | 周斌, 孙骐, 韩明, 等. XUV成像系统中像传递函数研究用的Si刻蚀膜[J]. 强激光与粒子束, 2005, 17(01). |
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| 作者姓名： | 周斌 孙骐 韩明 熊斌 吴广明 黄耀东 沈军 |
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| 作者单位： | 1.同济大学 波耳固体物理研究所, 上海 200092;;;2.中国科学院 上海冶金所传感器国家重点联合实验室, 上海 200050 |
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| 摘 要： | 研制具有网格或条状图形的Si刻蚀膜靶，用于XUV系统中像传递函数的研究。在自截止腐蚀工艺制备Si平面薄膜的基础上，结合离子束刻蚀工艺，获得刻蚀深度为1.0 μm左右，网格尺寸为25 μm×25 μm，或条状线宽为5 μm的Si刻蚀膜；测量了Si刻蚀膜的形貌和刻蚀深度；研究了离子束刻蚀参数对图形形貌的影响。并介绍采用两种靶型获得的像传递函数信息。
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| 关 键 词： | 像传递函数 离子束刻蚀 Si刻蚀膜 |
Silicon grating foil used to analyze the image transfer function in XUV radiography system |
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| zhou bin, sun qi, han ming, et al. Silicon grating foil used to analyze the image transfer function in XUV radiography system[J]. High Power Laser and Particle Beams, 2005, 17. |
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| Authors: | zhou bin sun qi han ming xiong bin wu guang-ming huang yao-dong shen jun |
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| Affiliation: | 1. .Pohl Institute of Solid State Physics,Tongji University,Shanghai 200092,China;;;2. Shanghai Institute of Metallurgy,Chinese Academy of Sciences,Shanghai 200050,China |
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| Abstract: | The image transfer function is used to judge the precision of XUV radiography system and silicon grating foils are prepared to measure the image transfer function. Using photoetching and ion beam etching processes, the silicon grating foils with check and stripe pattern were prepared on thin silicon foil. The thickness of thin silicon foil was 3 to 4 μm and the pattern’s etching depth was about 1 μm. The size of check pattern was 25 μm×25 μm and the width of stripe pattern was 5 μm. The parameters of photoetching and ion beam etching processes were studied to control the precision of patterns. And silicon grating foils were used to measure the image transfer function by XUV radiography system on “Shenguang Ⅱ” high power laser facility in 2000. |
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| Keywords: | image transfer function ion beam etching silicon grating foil |
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