C59N单分子整流器

通过将单个C59N分子置于双势垒隧道结中，从而利用单电子隧穿效应和C59N分子的特殊能级结构，我们成功地实现了一种新型的单分子整流器件.实验中这个整流器件的正向导通电压约为0.5—0.7 V，反向击穿电压约为1.6—1.8 V.理论分析表明，中性C59N分子的半占据费米能级以及在不同充电情况下费米能级的不对称移动是形成整流效应的主要原因.其构成原理也决定了该器件具有稳定、易重复的特点.

Single C59N molecule as a molecular rectifier

By placing a single C59N molecule in a double-barrier tunnel junction we have realized a new type of single molecule rectifier device based on the single electron tunneling effect and the special electronic structure of the C59N molecule. In our experiments the positive onset voltage is about 0.5—0.7 V, while the negative onset voltage is about 1.6—1.8 V. Theoretical analyses show that the half-occupied Fermi level of the neutral C59N molecule and the asymmetric shift of the Fermi level when the molecule is charged are responsible for the molecular rectification. The principle of this molecular device ensures the stability and repeatability of its rectifying properties.