| 高发射电流密度二极管实验研究 |
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| 引用本文： | 张永辉, 常安碧, 向飞, 等. 高发射电流密度二极管实验研究[J]. 强激光与粒子束, 2005, 17(09). |
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| 作者姓名： | 张永辉 常安碧 向飞 甘延青 刘忠 周传明 |
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| 作者单位： | 1.中国工程物理研究院 应用电子学研究所,四川 绵阳 621 900;;;2.中国工程物理研究院 研究生部,北京 1 00088;;;3.中国工程物理研究院,四川 绵阳 621 900 |
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| 摘 要： | 介绍了一种径向绝缘的高发射电流密度二极管的结构及其磁场系统，该二极管采用爆炸发射方式，阴极为高密度热解石墨，绝缘子为氧化铝陶瓷，并采用阴极屏蔽技术，阴极尖端处的最高场强达2.470 MV/cm。同时利用CHP01加速器实验平台对这种二极管的发射特性进行了实验研究。其输出电子束参数达到：电压600 kV、电流12 kA、脉冲宽度45 ns、脉冲重复频率100 Hz、阴极电子发射密度达17 kA/cm2。电压不稳定度小于3%，电流不稳定度小于5%。研究了在高发射电流密度下二极管重复频率稳定运行问题及引导磁场对二极管输出束流及特性阻抗的影响，结果表明：二极管输出束流随磁场增大而有所减小并趋于稳定；特性阻抗则随磁场的增大而增大，当磁场强度达到临界磁场以上时，特性阻抗也趋于稳定。
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| 关 键 词： | 二极管 重复脉冲 电子束 发射密度 |
Experimental investigation of a high emission and intense current electron-beam diode |
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| zhang yong-hui, chang an-bi, xiang fei, et al. Experimental investigation of a high emission and intense current electron-beam diode[J]. High Power Laser and Particle Beams, 2005, 17. |
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| Authors: | zhang yong-hui chang an-bi xiang fei gan yan-qing liu zhong zhou chuan-ming |
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| Affiliation: | 1. Institute of Applied Electronics,CAEP,P.O.Box 919-1015,Mianyang 621900,China;;;2. Graduate School of China Academy of Engineering Physics,P.O.Box 2101,Beijing 100088,China;;;3. China Academy of Engineering Physics,Mianyang 621900,China |
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| Abstract: | A radial insulated diode with a high emission current density of electron-beam was introduced in this paper. As an experiment platform, the CHP01 accelerator was used to study the emission characteristics of the diode. This intense current electron-beam diode can operate steadily at the pulse repetition rate as high as 100 Hz. The beam voltage exceeds 600 kV, beam current 12 kA, pulse width 45 ns. Correspondingly the emission current density of cathode is as high as 17 kA/cm2. The characteristic impedance of diode as a function of magnetic-field was studied. |
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| Keywords: | diode repetition rate electron-beam emission density |
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