From two-dimensional materials to heterostructures |
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| Institution: | 1. Department of Advanced Materials Science, Graduate School of Frontier Science, University of Tokyo, Kashiwa 5-1-5, Chiba 277-8561, Japan;2. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8654, Japan;3. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Ibaraki 304-0044, Japan;1. Department of Electrical and Electronic Engineering, Rajshahi University of Engineering & Technology, Rajshahi 6204, Bangladesh;2. Department of Computer Science, Cihan University-Slemani, Sulaimaniya, Iraq;1. Institut des Sciences Moléculaires d’Orsay, ISMO-CNRS, Bât. 210, Université Paris-Sud, F-91405 Orsay, France;2. Département de Physique, Université de Cergy-Pontoise, F-95031 Cergy-Pontoise Cedex, France;3. Laboratoire de Chimie de Coordination et Catalyse, Département de Chimie, Faculté des Sciences-Semlalia, Université Cadi Ayyad, Marrakech 40001, Morocco;4. Department of Physics, University of Central Florida, Orlando, FL 32816, USA;5. TEMPO Beamline, Synchrotron Soleil, L’Orme des Merisiers Saint-Aubin, B.P. 48, 91192 Gif-sur-Yvette Cedex, France;1. Institute of Microscale Optoelectronics, College of Electronic Science and Technology, Shenzhen University, Shenzhen, Guangdong 518060, PR China;2. Mobile[-Internet-Things Industralization Institute, College of Management, Shenzhen University, Shenzhen 518060, China;3. SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong 518060, PR China;1. College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China |
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| Abstract: | Graphene, hexagonal boron nitride, molybdenum disulphide, and layered transition metal dichalcogenides (TMDCs) represent a class of two-dimensional (2D) atomic crystals with unique properties due to reduced dimensionality. Stacking these materials on top of each other in a controlled fashion can create heterostructures with tailored properties that offers another promising approach to design and fabricate novel electronic devices. In this report, we attempt to review this rapidly developing field of hybrid materials. We summarize the fabrication methods for different 2D materials, the layer-by-layer growth of various vertical heterostructures and their electronic properties. Particular interests are given to in-situ stack aforementioned 2D materials in controlled sequences, and the TMDCs heterostructures. |
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| Keywords: | Graphene Boron nitride Metal dichalcogenide Vertical stacking Heterostructures Chemical vapor deposition |
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