Photoelectric behaviour of lattice-matched GaAs/Al
x
Ga1-
x
As quantum well electrodes |
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| Authors: | Yao Liu Xurui Xiao Yiping Zeng Chunhui Yan Haiqun Zheng Dianzhao Sun |
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| Institution: | (1) Institute of Photographic Chemistry, Chinese Academy of Sciences, 100101 Beijing, China;(2) Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, China |
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| Abstract: | The photoelectric properties of the lattice-matched GaAs/A1
x
Gal -
x
As quantum well electrodes and the influence of the electrode structure such as well width, the thickness of outer barrier
and the number of period were studied in a nonaqueous electrolyte. A new kind of structure of multiple quantum well electrode
with varied well width, possessing the quantum yield three times that of GaAs bulk materials, was designed and fabricated.
Project supported by the National Natural Science Foundation of China. |
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| Keywords: | quantum well semiconductor electrode photocurrent quantum yield photoelectrochemistry |
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