常压化学气相沉积法在Ag/Si(111)模板上生长ZnO薄膜及其性能研究

在Si衬底上利用磁控溅射的方法沉积1.5 nm厚度的Ag膜用以阻挡Si衬底被氧化。采用常压金属有机化学气相沉积法(MOVCD),在Ag/Si(111)衬底上成功地生长出马赛克结构的ZnO薄膜。用光学显微镜观察表面形貌,结果显示有带晶向特征的微裂纹,裂纹密度为100 cm-1。依据X射线晶体衍射的结果,薄膜结晶质量良好,呈C轴高度择优取向。用双晶X射线衍射得到(002)面的ω扫描半峰宽为1.37°。温度10 K时光致发光谱(PL)观察到自由激子、束缚激子发射及它们的声子伴线。结果表明,金属有机化学气相沉积法方法在Si(111)衬底上制备ZnO薄膜时,Ag是一种有效的缓冲层。

Property of ZnO Thin Films Grown on Ag-Si(111) Templates by Atmospheve-Pressure Metal Organic Chemical Vapor Deposition

An Ag layer with thickness of 1.5 nm is deposited on Si(111) substrate by magnetron sputtering in order to protect the Si surface from oxidation. ZnO films with mosaic structure are grown on Ag-Si(111) templates by atmospheric-pressure metalorganic chemical vapor depositon (AP-MOCVD). The micro-crack with orientation character is found on ZnO films with optical microscope, and the crack density is 100 cm-1. X-ray diffraction results show that the highly c-axis oriented ZnO films is obtained. The fullwidth at half-maximum of the (002) ω-scans of double-crystal X-ray diffraction is 1.37°. Free exciton and binding exciton emission accompanied by their LO phonons could be observed from the photoluminescence spectrum at 10 K. All the results show that the metal Ag is an effective buffer layer for the growth of ZnO films on Si(111) substrate with MOCVD method.