Structural and electrical properties of CuGaSe2 thin films on GaAs substrates |
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Authors: | B. Schumann,A. Tempel,G. Kü hn,H. Neumann,Nguyen Yan Nam,T. Hä nsel |
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Abstract: | CuGaSe2 thin films with thicknesses in the range of 0.1 μm were deposited onto semiinsulating (111) A-oriented GaAs substrates by flash evaporation under controlled growth conditions. Epitaxial growth begins at a substrate temperature of Tsub = 835 K. Besides the chalcopyrite phase a hexagonal modification was observed in the range Tsub = 835 to 855 K. At Tsub ≧ 860 K the films have sphalerite structure. All epitaxial films were p-type conducting. Two acceptor levels with ionization energies of about 150 meV and 550 meV, respectively, were obtained from an analysis of electrical and photoluminescence measurements. |
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