Abstract: | Electron microscopy was used to study non-doped GaAs layers obtained in a chloride system Ga-AsCl3-H2. Electron concentrations is 1013–1015 cm−3, mobility at liquid nitrogen temprature reaches 200000 cm2/v. sec. It is shown that a fraction of the growth surface taken with (110) faces is less for films with less electron concentration. The main type of defects in pure GaAs layers is precipitates at pinning centres of growth steps. Estimations based on microdiffraction patterns and irradiation effects show that the impurity concentration in them is 1016–1019 cm−3. The impurity in precipitates is assumed to be electrically non-active, mainly, in interstitial positions. |