| Abstract: | The phase diagram of the Ga–In–As–Sb quaternary system has been determined experimentally and also has been treated on the base of thermodynamic calculations. The liquidus data were obtained by DTA and solidus data were determined using electron microprobe analysis on LPE-layers of GaxIn1–xAsySb1–y on GaSb and InAs substrates. Isolattice-parameter heterostructures prepared on these substrates were free of mismatch dislocations and suitable for application to light-emitting diodes and semiconductor lasers. |
