Tempern von Cd0,2Hg0,8Te im Quecksilberdampf

N-type Cd_0,2Hg_0,8Te with a minimum concentration and a maximum mobility of charge carriers serves as starting material for the production of photoconductive infrared detectors with high sensitivity. The number of the defects, originating in Cd_0,2Hg_0,8Te during crystal growth, can be considerably diminished by a heat treatment in saturated mercury vapour. Details of the preparation and the accomplishment of the annealing essays as well as the results of the experiments are described.