| 半导体异质外延薄膜质量的X射线衍射检测方法 |
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| 引用本文： | 葛中久 李梅. 半导体异质外延薄膜质量的X射线衍射检测方法[J]. 发光学报, 1996, 17(3): 257-260 |
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| 作者姓名： | 葛中久 李梅 |
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| 作者单位： | 中国科学院长春物理研究所, 长春 130021 |
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| 摘 要： | 本文介绍了一种使用X射线宽角测角仪和双晶测角仪相配合的检测半导体异质外延薄膜的方法.其特点是快速且不损伤样品,特别适合大失配度的外延生长的条件试验检测,也可用于器件生产过程中的外延质量的监控.此法还可用于各种超晶格结构参数的测量.
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| 关 键 词： | X射线检测 外延薄膜 |
| 收稿时间： | 1995-09-08 |
X-RAY DIFFRACTION TESTING METHOD OF SEMICONDUCTOR HETERO-EPILAYER |
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| Ge Zhongjiu, Li Mei, Zhang Zhishun, Feng Yuchen. X-RAY DIFFRACTION TESTING METHOD OF SEMICONDUCTOR HETERO-EPILAYER[J]. Chinese Journal of Luminescence, 1996, 17(3): 257-260 |
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| Authors: | Ge Zhongjiu Li Mei Zhang Zhishun Feng Yuchen |
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| Affiliation: | Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021 |
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| Abstract: | The method of testing semiconductor hetero-epilayer using X-ray wide angle goniometer and double crystal goniometer was introduced.Two difficulties have been surmounted in this method.They are rectifing the orientation deviation of wafer and returning to normal position of θ=0° of wide angle goniometer.With this method satisfactory results were obtained for different kinds of epilayers.This method may be applied to test the lattice mismatch between substrate and epilayer, composition and their variation, detect the perfectness of substrate and epilayer and evaluate the superlattice structure parameter etc. |
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| Keywords: | X-ray test epilayer |
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