Influence of the plasma parameters on the properties of aluminum oxide thin films deposited by laser ablation |
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Authors: | L Escobar-Alarcón A Arrieta E Camps S Romero M Fernandez E Haro-Poniatowski |
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Institution: | (1) Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027 Mexico City, Mexico;(2) Departamento de Física, Universidad Autónoma Metropolitana, Apartado Postal 55-534 Mexico City, Mexico |
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Abstract: | The plasma produced by the ablation of a high purity Al2O3 target, using the fundamental line (1064 nm) of a Nd:YAG laser, was characterized. The laser fluence was varied in order
to study its effect on the characteristics of the produced plasma as well as on the properties of the material deposited.
Optical emission spectroscopy (OES) was used to determine the type of excited species present in the plasma. The mean kinetic
energy of the ions and the maximum plasma density were determined from the time of flight (TOF) curves, obtained with a planar
Langmuir probe. The obtained results reveal that the fast peak in the probe curve could be attributed to Al III, while the
slow peak corresponds to the Al II. Aluminum oxide thin films were then deposited under the same conditions of the diagnosed
plasma, in an attempt to correlate the plasma parameters with the properties of the deposited material. It was found that
when Al II ion energies are lower than 461.0 eV the films deposited have structural characteristics similar to that of α-Al2O3, whereas at ion energies greater than 461.0 eV amorphous material was obtained. |
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Keywords: | PACS" target="_blank">PACS 81 15 Fg 68 55 Jk 81 05 Je |
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