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Microstructural Characterization of V-Defects in InGaN/GaN Multiquantum Wells |
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| Authors: | Wang H. Jin G. Tan Q. |
| Affiliation: | 1.Academy of Electronic Information and Electrical Engineering, Xiangnan University, Chenzhou, 423000, People’s Republic of China ;2.Institute of Physics and Information Science, Hunan Normal University, Changsha, 410081, People’s Republic of China ; |
| Abstract: | JETP Letters - InGaN multiple-quantum-well (MQW) structures grown by metal-organic chemical-vapor deposition (MOCVD) are found to contain V-defects attached to threading dislocations. The nature of... |
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