Amorphous semiconducting AsSeI

It is shown on the basis of differential thermal analysis (DTA) of AsSeI samples that a reliable technique ensuring reproducible preparation of vitreous AsSeI has been found. The values of the softening and melting points are 50 °C and 220 °C, respectively.Transmittance study has been done on glasses of general compositionxAs₂Se₃+(1–x). AsSeI (forx=1.0; 0.8; 0.4; 0.0). Samples in the form of slabs of different thickness (d=0.2; 0.5; 1.0; 2.0 mm) were used to determine the wavelength dependence of the absorption coefficientK. On the basis of the results of the quoted measurements performed on thin As₂Se₃ layers in the high absorption region, the optical gap width of vitreous semiconducting AsSeI has been extrapolated, using certain simplified conceptions mentioned in the paper. The value ofE _g at 293 °K and its temperature dependence coefficient=(E _g/T)_p for AsSeI were found to be 1.91 eV and –6.7×10^–4eV/grad, respectively.