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溶液法铝诱导晶化制备多晶硅薄膜
引用本文:罗翀,孟志国,王烁,熊绍珍. 溶液法铝诱导晶化制备多晶硅薄膜[J]. 物理学报, 2009, 58(9): 6560-6565
作者姓名:罗翀  孟志国  王烁  熊绍珍
作者单位:南开大学光电子器件与技术研究所,天津 300071
基金项目:国家高技术研究发展计划(批准号:2004AA303570)和国家自然科学基金(批准号:60437030)资助的课题.
摘    要:采用铝(Al)盐溶液作为诱导源进行了非晶硅晶化成多晶硅的研究.光学显微镜观测与Raman光谱分析表明,合适配比的铝盐溶液能够将非晶硅予以诱导晶化.采用剥层XPS测试分析,探究了Al盐溶液与硅表面可能的化学反应以及随之发生的硅-铝层交换的过程.最后对溶液法诱导晶化的机理进行了讨论.关键词:铝诱导晶化多晶硅薄膜溶液法

关 键 词:铝诱导晶化  多晶硅薄膜  溶液法
收稿时间:2008-06-19

Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution
Luo Chong,Meng Zhi-Guo,Wang Shuo,Xiong Shao-Zhen. Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution[J]. Acta Physica Sinica, 2009, 58(9): 6560-6565
Authors:Luo Chong  Meng Zhi-Guo  Wang Shuo  Xiong Shao-Zhen
Abstract:A new method to prepare polycrystalline silicon thin film from a-Si thin films using aluminate solution as induced source was introduced in this article. According to the analysis using optical microscope and Raman spectrum, it was indicated that the a-Si thin film could successfully be crystallized in certain Al-salt solutions. Using the X-ray photoelectron spectroscopy explored by shelling the samples into several sub-layers, the possible chemical reaction between the surface of silicon and aluminate solution was found and the continuous layer exchange process was confirmed. In the end, the mechanism of solution-based aluminum-induced crystallization was discussed.
Keywords:aluminum-induced crystallization   polycrystalline silicon thin films   solution-based method
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