Formation of multilayer strained-layer heterostructures by liquid epitaxy. II. Simulation of the fabrication of heterostructures based on indium-arsenic-antimony-bismuth solid solutions

The formation of InAs_1−x−y Sb_xBi_y/InSb and InAs_1−x−y Sb_xBi_y/InSb_yBi_y strained-layer heterostructures by “capillary” LPE is simulated. The laws governing the dependence of the gap width E _g and the thickness d of the epilayers on the conditions of the process are revealed. It is shown that because of the sharp increase in the rate of epitaxial deposition as the LPE temperature is raised, the successful growth of epilayers of subcritical thickness is possible only up to T<550 K. The influence of the rate of laminar flow of the liquid in the growth channel in a relaxation regime and in a continuous pumping regime on the uniformity of the distribution of E _g and d in the epitaxial heterostructures is analyzed. Effective combinations of parameters for carrying out the process, which ensure the achievement of E _g ≈0.1 eV (77 K) in the active layers with variable-band-gap layers of minimal thickness, are established. Zh. Tekh. Fiz. 67, 50–56 (July 1997)