CT-6B托卡马克装置上电流上升阶段电子温度的光谱测量

在CT-6B托卡马克装置上,用一米掠入射真空紫外单色仪测量了氧杂质各阶离子OII-OVI的谱线辐射的时间变化,用HCN远红外激光干涉仪测量了电子密度的时间变化。利用谱线时间史的方法,由谱线起始时间估算了放电初期电流上升阶段电子温度的时间变化。用数值计算分别考察了氧杂质进入通量和约束时间对谱线峰值强度和起始时间的影响。估算得到的电子温度在放电开始后0.36,0.56,0.66,0.90和1.4ms,分别为3.6,5.6,7.3,10.8和21eV,它们反映了放电初期等离子体中心区电子温度的变化。 关键词：

SPECTROSCOPIC MEASUREMENT OF ELECTRON TEMPERA-TURE IN CURRENT RISING PHASE ON CT-6B TOKAMAK

The time evolution of electron temperature in plasma current rising phase on CT-6B Tokamak is estimated by the history method for oxygen impurity lines. The time variations of line emissions of OII-OV1 in VUV region are measured by one-meter grazing incidence vacuum spectrometer and the electron density is measured by using FIR HCN laser interferometer. The switch-on time of each line emission is used for estimating electron temperature. The influences of oxygen impurity influx rate and confinement time on intensity and switch-on time of line emissions are surveyed numerically. The estimated electron temperatures arc around 3.6, 5.6, 7.3, 10.8 and 21 eV, respectively at 0.36, 0.56, 0.66, 0.90 and 1.4 ms after the start of discharge, which indicate the plasma temperature in central region.