| AlxGa1-xAs(100)表面性质的研究 |
| |
| 引用本文： | 黄春晖,卢学坤,丁训民.AlxGa1-xAs(100)表面性质的研究[J].物理学报,1989,38(12):1968-1973. |
| |
| 作者姓名： | 黄春晖 卢学坤 丁训民 |
| |
| 作者单位： | 复旦大学表面物理实验室 |
| |
| 摘 要： | 用紫外光电子能谱研究了Al0.7Ga0.3As的表面态结构,观察到Al0.7Ga0.3As在价带中的两个表面态结构。在1500L原子氢吸附后消失。研究了这两个表面态结构在热退火消除表面损伤过程中的变化。结合LEED和XPS的实验结果,确定在450℃左右的热退火可以有效地消除损伤,获得一个完整的Al0.7Ga0.3As(100)表面。
关键词：
|
| 关 键 词： | AlxGa1－xAs 表面性质 半导体材料 |
| 收稿时间： | 1989-01-27 |
STUDY ON THE SURFACE PROPERTIES OF AlxGa1-xAs(100) |
| |
| HUANG CHUN-HUI,LU XUE-KUN and DING XUN-MIN.STUDY ON THE SURFACE PROPERTIES OF AlxGa1-xAs(100)[J].Acta Physica Sinica,1989,38(12):1968-1973. |
| |
| Authors: | HUANG CHUN-HUI LU XUE-KUN and DING XUN-MIN |
| |
| Abstract: | The surface states of Al0.7Ga0.3 As(l00) were studied by ultraviolet photoelecton spectro-scopy. It was found that there exist two surface states on Al0.7Ga0.3 As (100) surface, which could be removed by the adsorption of 1500 L hydrogen. The evolution of these two surface states with thermal annealing was investigated. Combining with the experimental results of LEED and XPS, it was recognized that the damage of surface could be removed effectively by a thermal annealing at a temperature near 450℃, and a nearly perfect surface of A10.7Ga0.3 As(l00) could be obtained. |
| |
| Keywords: | |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
